FFSM0865A
DIODE SIL CARB 650V 9.6A 4PQFNManufacturer: onsemi
Categories: Single Diodes
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The onsemi FFSM0865A is a 650V Silicon Carbide Schottky diode designed for high-performance applications. This component features an average rectified forward current (Io) of 9.6A and a maximum forward voltage (Vf) of 1.75V at 8A. Its rapid switching characteristics are highlighted by its "No Recovery Time > 500mA (Io)" rating, indicating its suitability for demanding power conversion circuits where minimizing switching losses is critical. The device exhibits a reverse leakage current of 200 µA at 650V and a junction capacitance of 463pF at 1V, 100kHz. Offered in a compact 4-PQFN (8x8) surface mount package, the FFSM0865A operates across a wide junction temperature range of -55°C to 175°C and is supplied on tape and reel. This SiC Schottky diode is utilized in various industrial sectors, including power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 463pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 9.6A |
| Supplier Device Package | 4-PQFN (8x8) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 8 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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