FFSH5065B-F155
650V 50A SIC SBD GEN 1.5Manufacturer: onsemi
Categories: Single Diodes
Quality Control: Learn More
onsemi FFSH5065B-F155 is a 650V, 48A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) in a TO-247-2 package. This component features a low forward voltage drop of 1.7V at 50A and exhibits no reverse recovery time above 500mA. Its high operating temperature range of -55°C to 175°C junction temperature and minimal reverse leakage current of 40 µA at 650V make it suitable for demanding applications. The FFSH5065B-F155 is ideal for power factor correction, inverter, and power supply designs across industries such as industrial automation, electric vehicle charging infrastructure, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 51 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2030pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 48A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 50 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Qualification | - |
Request a Quote
Clients Also Buy
FFSH3065ADN-F155
DIODE SIL CARB 650V 23A TO247-3
SURS8220T3G-IR01
DIODE GEN PURP 200V 2A SMB
MURH8100E
RECTIFIER, AVALANCHE, 4A, 1000V,
