FFSH5065A-F155
DIODE SIL CARB 650V 60A TO247-3Manufacturer: onsemi
Categories: Single Diodes
Quality Control: Learn More
onsemi FFSH5065A-F155 is a 650V, 60A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-247-3 package, exhibits a low reverse leakage current of 200 µA at 650V and a junction operating temperature range of -55°C to 175°C. Its zero reverse recovery time (trr) and "No Recovery Time > 500mA (Io)" designation highlight its suitability for high-efficiency power switching applications. The capacitance at 1V, 100kHz is specified at 2530pF. This device is commonly employed in industrial power supplies, electric vehicle charging, and advanced motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2530pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 60A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
Request a Quote
Clients Also Buy
MURH8100E
RECTIFIER, AVALANCHE, 4A, 1000V,
NRVUA160VT3G-GA01
DIODE GEN PURP 600V 2A SMA
MBRM110LT3
DIODE SCHOTTKY 10V 1A POWERMITE
