FFSH4065A
DIODE SIL CARB 650V 48A TO247-2Manufacturer: onsemi
Categories: Single Diodes
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The onsemi FFSH4065A is a Silicon Carbide (SiC) Schottky diode designed for demanding power applications. This through-hole component, housed in a TO-247-2 package, offers a maximum DC reverse voltage of 650 V and an average rectified current handling capability of 48 A. Its SiC Schottky technology delivers exceptional performance characteristics, including a reverse leakage current of 200 µA at 650 V and a remarkably fast switching speed, indicated by its "No Recovery Time > 500mA (Io)" rating. The FFSH4065A features a junction operating temperature range of -55°C to 175°C, ensuring reliability in harsh environments. Its low capacitance of 1989pF @ 1V, 100kHz further contributes to its suitability for high-frequency power conversion in industries such as industrial power supplies, electric vehicle charging, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1989pf @ 1V, 100kHz |
| Current - Average Rectified (Io) | 48A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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