FFSH40120A-F155
1200V 40A SIC SBDManufacturer: onsemi
Categories: Single Diodes
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The onsemi FFSH40120A-F155 is a 1200V, 61A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) in a TO-247-2 through-hole package. This device features a maximum forward voltage drop of 1.75V at 40A and a reverse leakage current of 200 µA at 1200V. Notably, the FFSH40120A-F155 exhibits zero reverse recovery time for currents greater than 500mA (Io), offering significant performance advantages in high-frequency switching applications. Its operating junction temperature range is -55°C to 175°C. This SiC SBD is ideal for power factor correction (PFC) circuits, electric vehicle charging, industrial power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2250pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 61A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 40 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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