FFSH40120A
DIODE SIL CARB 1.2KV 61A TO247-2Manufacturer: onsemi
Categories: Single Diodes
Quality Control: Learn More
The onsemi FFSH40120A is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component features a 1200 V reverse voltage rating and a significant 61 A average rectified forward current capability. Its SiC technology enables exceptionally fast switching with a reverse recovery time (trr) of 0 ns, specifically noted as having no recovery time greater than 500mA (Io). The device exhibits a low reverse leakage current of 200 µA at 1200 V and a capacitance of 2250 pF at 1V, 100kHz. Packaged in a TO-247-2 through-hole format, the FFSH40120A operates across a wide junction temperature range of -55°C to 175°C. This component is commonly utilized in power factor correction, electric vehicle charging, and industrial power supplies demanding high efficiency and reliability.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 2250pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 61A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
Request a Quote
Clients Also Buy
FFSH3065ADN-F155
DIODE SIL CARB 650V 23A TO247-3
SURS8220T3G-IR01
DIODE GEN PURP 200V 2A SMB
MURH8100E
RECTIFIER, AVALANCHE, 4A, 1000V,
