FFSH3065ADN-F155
DIODE SIL CARB 650V 23A TO247-3Manufacturer: onsemi
Categories: Single Diodes
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onsemi's FFSH3065ADN-F155 is a Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications. This device offers a maximum DC reverse voltage of 650 V and an average rectified forward current capability of 23 A. Key performance characteristics include a low reverse leakage current of 200 µA at 650 V and a remarkably fast switching speed denoted by "No Recovery Time > 500mA (Io)". The diode exhibits a junction capacitance of 887 pF at 1 V and 100 kHz. Packaged in a TO-247-3 through-hole configuration, the FFSH3065ADN-F155 operates across an extended junction temperature range of -55°C to 175°C. This component is suitable for demanding applications in sectors such as electric vehicle charging, industrial motor drives, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 887pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 23A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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