FFSH30120A
DIODE SIL CARB 1.2KV 46A TO247-2Manufacturer: onsemi
Categories: Single Diodes
Quality Control: Learn More
The onsemi FFSH30120A is a Silicon Carbide (SiC) Schottky diode designed for high-performance power applications. This component features a 1200 V reverse voltage rating and a 46 A average rectified current capability. Its TO-247-2 package facilitates through-hole mounting, making it suitable for robust power circuitry. The device exhibits a low reverse leakage current of 200 µA at 1200 V and a capacitance of 1740 pF at 1 V. Notably, it boasts a "No Recovery Time > 500mA (Io)" characteristic, indicative of its advanced SiC Schottky technology and optimized design for minimal switching losses. The FFSH30120A operates across a wide junction temperature range of -55°C to 175°C, ensuring reliability in demanding environments. This diode is frequently employed in industrial power supplies, electric vehicle charging, and renewable energy systems where efficiency and high voltage handling are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1740pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 46A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
Request a Quote
Clients Also Buy
FFSH3065ADN-F155
DIODE SIL CARB 650V 23A TO247-3
SURS8220T3G-IR01
DIODE GEN PURP 200V 2A SMB
MURH8100E
RECTIFIER, AVALANCHE, 4A, 1000V,
