FFSH2065B-F155
650V 20A SIC SBD GEN 1.5Manufacturer: onsemi
Categories: Single Diodes
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The onsemi FFSH2065B-F155 is a 650V, 20A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) with a TO-247-2 through-hole package. This device offers 22.3A average rectified current (Io) and a maximum forward voltage (Vf) of 1.7V at 20A. It exhibits a very low reverse leakage current of 40 µA at 650V and features zero reverse recovery time for current above 500mA. The FFSH2065B-F155 operates across a junction temperature range of -55°C to 175°C. Its inherent SiC technology makes it suitable for high-efficiency power conversion applications in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems. The device has a capacitance of 866pF at 1V and 100kHz.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 51 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 866pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 22.3A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Qualification | - |
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