FFSH2065ADN-F155
DIODE SIL CARB 650V 13A TO247-3Manufacturer: onsemi
Categories: Single Diodes
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onsemi FFSH2065ADN-F155, a Silicon Carbide (SiC) Schottky diode, offers robust performance with a 650 V reverse voltage and 13 A average rectified current. This through-hole component, housed in a TO-247-3 package, features a low leakage current of 200 µA at 650 V. Its SiC technology provides superior switching characteristics, indicated by the absence of recovery time for currents greater than 500 mA. The FFSH2065ADN-F155 is designed for demanding applications across power factor correction, electric vehicle charging, industrial power supplies, and solar inverters, where high efficiency and reliability are paramount. Operating temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 575pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 13A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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