FFSH2065A
DIODE SIL CARB 650V 25A TO247-2Manufacturer: onsemi
Categories: Single Diodes
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onsemi FFSH2065A is a 650V, 25A SiC Schottky diode in a TO-247-2 package. This through-hole component offers a significantly reduced reverse recovery time (trr) of 0 ns, enabling higher switching frequencies and improved system efficiency. Its low leakage current of 200 µA at 650V and a junction operating temperature range of -55°C to 175°C make it suitable for demanding power applications. The device's capacitance is rated at 1085pF at 1V and 100kHz. The FFSH2065A is commonly utilized in high-efficiency power conversion systems, motor drives, electric vehicle charging infrastructure, and renewable energy applications where superior performance and reliability are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1085pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 25A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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