FFSH20120A-F155
DIODE SIL CARB 1.2KV 30A TO247-2Manufacturer: onsemi
Categories: Single Diodes
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onsemi FFSH20120A-F155 is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This component features a maximum DC reverse voltage (Vr) of 1200 V and a high average rectified current (Io) capability of 30 A. The forward voltage drop (Vf) is a maximum of 1.75 V at 20 A. It exhibits a low reverse leakage current of 200 µA at 1200 V. The device operates across a wide junction temperature range from -55°C to 175°C. With a capacitance of 1220pF at 1V and 100KHz, and a stated "No Recovery Time > 500mA (Io)" indicating its fast switching characteristics, this diode is suitable for demanding power electronics applications including electric vehicle charging, industrial power supplies, and solar inverters. The FFSH20120A-F155 is supplied in a TO-247-2 package and is available in tube packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1220pF @ 1V, 100KHz |
| Current - Average Rectified (Io) | 30A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 20 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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