FFSH1665A
DIODE SIL CARB 650V 23A TO247-2Manufacturer: onsemi
Categories: Single Diodes
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The onsemi FFSH1665A is a Silicon Carbide (SiC) Schottky diode. This through-hole component, packaged in a TO-247-2, offers a maximum DC reverse voltage of 650 V and an average rectified current (Io) of 23 A. It features a low reverse leakage of 200 µA at 650 V and exhibits no recovery time above 500 mA (Io). The junction operating temperature range is from -55°C to 150°C. This device is suitable for high-efficiency power conversion applications across various industries, including electric vehicle charging, industrial power supplies, and renewable energy systems. Key specifications include a capacitance of 887 pF at 1V, 100kHz.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 887pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 23A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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