FFSH1065B-F155
650V 10A SIC SBD GEN 1.5Manufacturer: onsemi
Categories: Single Diodes
Quality Control: Learn More
onsemi FFSH1065B-F155 is a 650V, 10A Silicon Carbide (SiC) Schottky Barrier Diode (SBD) designed for high-performance applications. This through-hole device, packaged in a TO-247-2, offers a maximum forward voltage (Vf) of 1.7V at 10A and an average rectified current (Io) of 11.5A. Featuring a reverse leakage of 40 µA at 650V, the FFSH1065B-F155 exhibits exceptionally fast switching characteristics with no significant reverse recovery time above 500mA. Its operating junction temperature range is -55°C to 175°C. This SiC SBD is suitable for power factor correction circuits, inverters, and power supplies within the industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 51 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 421pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 11.5A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Qualification | - |
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