FFSH10120A-F155
DIODE SIL CARB 1.2KV 17A TO247-2Manufacturer: onsemi
Categories: Single Diodes
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The onsemi FFSH10120A-F155 is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. With a maximum DC reverse voltage of 1200 V and an average rectified current of 17A, this component offers superior thermal performance and efficiency. It features a low forward voltage drop of 1.75 V at 10A and a reverse leakage current of 200 µA at 1200 V. The diode's SiC technology ensures an exceptionally fast switching speed with no specified reverse recovery time for currents above 500mA. Packaged in a TO-247-2 through-hole configuration, it operates across a junction temperature range of -55°C to 175°C. This device is suitable for power factor correction, AC-DC converters, and DC-DC converters in demanding industries such as automotive, industrial power, and renewable energy.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 612pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 17A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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