FFSD0465A
DIODE SIL CARB 650V 7.6A DPAKManufacturer: onsemi
Categories: Single Diodes
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onsemi FFSD0465A is a Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications. This surface mount component, housed in a TO-252 (DPAK) package, offers a high reverse voltage rating of 650 V and an average rectified current capability of 7.6 A. The FFSD0465A features a low forward voltage drop of 1.75 V at 4 A and exhibits no significant reverse recovery time above 500 mA, contributing to reduced switching losses. Its operating junction temperature range is -55°C to 175°C, making it suitable for demanding environments. Typical applications include power factor correction, switch mode power supplies, and electric vehicle charging infrastructure. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 258pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 7.6A |
| Supplier Device Package | TO-252 (DPAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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