FFSB1265A
DIODE SIL CARB 650V 14A D2PAK-3Manufacturer: onsemi
Categories: Single Diodes
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The onsemi FFSB1265A is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. Featuring a 650V reverse voltage rating and a 14A average rectified current capability, this component is ideal for power factor correction, active clamp circuits, and output rectification in power supplies. Its TO-263 (D2PAK) surface mount package ensures efficient thermal management. The FFSB1265A exhibits a low forward voltage drop of 1.75V at 12A and boasts a reverse recovery time of 0 ns, contributing to reduced switching losses and improved system efficiency. Operating across a wide junction temperature range of -65°C to 175°C, it is suitable for demanding environments in sectors such as industrial power, automotive, and telecommunications. The device is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 665pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 14A |
| Supplier Device Package | TO-263 (D2PAK) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 12 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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