FFSB0465A
DIODE SIL CARB 650V 7.7A D2PAK-2Manufacturer: onsemi
Categories: Single Diodes
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The onsemi FFSB0465A is a Silicon Carbide (SiC) Schottky diode designed for demanding applications. This component offers a maximum DC reverse voltage (Vr) of 650 V and an average rectified forward current (Io) of 7.7 A. It features a low forward voltage drop (Vf) of 1.75 V at 4 A and exhibits no significant reverse recovery time (trr) above 500 mA, contributing to enhanced efficiency. The device is packaged in a TO-263-3, D2PAK (2 leads + tab) surface mount package, suitable for high-power density designs. Operating temperature ranges from -55°C to 175°C. Industries benefiting from this SiC diode include automotive, industrial power supplies, and renewable energy systems. Its capacitance at 1V is 258pF. The reverse leakage current at 650V is rated at 200 µA. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 258pF @ 1V, 100kHz |
| Current - Average Rectified (Io) | 7.7A |
| Supplier Device Package | TO-263 (D2PAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 4 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
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