FES16JT
DIODE GEN PURP 600V 16A TO220-2Manufacturer: onsemi
Categories: Single Diodes
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onsemi FES16JT is a fast recovery general purpose diode. This component features a repetitive peak reverse voltage (Vrrm) of 600 V and a continuous average forward current (Io) of 16 A. The forward voltage drop (Vf) is a maximum of 1.5 V at 8 A, and the reverse leakage current (Ir) is 10 µA at 600 V. With a reverse recovery time (trr) of 50 ns, it is categorized as a fast recovery diode. The device is housed in a TO-220-2 package, suitable for through-hole mounting. Typical applications for this diode include power supply rectification, switching power supplies, and motor control circuits across various industrial and consumer electronics sectors. The junction operating temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 145pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |