EGP10J
DIODE GEN PURP 600V 1A DO41Manufacturer: onsemi
Categories: Single Diodes
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onsemi EGP10J is a general-purpose diode designed for demanding applications. This through-hole component, packaged in a DO-41 (DO-204AL) case, offers a 600 V reverse voltage (Vr) and a continuous forward current (Io) of 1 A. It features a maximum forward voltage drop (Vf) of 1.7 V at 1 A and a low reverse leakage current of 5 µA at 600 V. With a reverse recovery time (trr) of 75 ns, this diode is categorized as fast recovery. The operating junction temperature range is -65°C to 150°C. Commonly utilized in power supply rectification, switching power supplies, and general industrial applications, the EGP10J is supplied in cut tape packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | DO-204AL, DO-41, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-41 |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
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