DSE010-TR-E
DIODE GEN PURP 80V 100MAManufacturer: onsemi
Categories: Single Diodes
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onsemi DSE010-TR-E is a general-purpose diode designed for small-signal applications. This component features a repetitive peak reverse voltage (Vr) of 80 V and an average rectified forward current (Io) of 100 mA. The forward voltage drop (Vf) is a maximum of 1.2 V at 100 mA, and the reverse leakage current (Ir) at the maximum reverse voltage is rated at 500 nA. With a reverse recovery time (trr) of 4 ns, this diode is suitable for high-frequency switching circuits. Its operating junction temperature range is -55°C to 125°C. The capacitance at 0.5 V and 1 MHz is 3 pF. This component is supplied in a Tape & Reel (TR) package. Typical applications include power supplies, signal processing, and general rectification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | - |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 3pF @ 0.5V, 1MHz |
| Current - Average Rectified (Io) | 100mA |
| Operating Temperature - Junction | -55°C ~ 125°C |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 500 nA @ 80 V |
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