DLA11C-TR-E
DIODE GEN PURP 200V 1.1A SMDManufacturer: onsemi
Categories: Single Diodes
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The onsemi DLA11C-TR-E is a general-purpose rectifier diode designed for surface-mount applications. This component features a maximum repetitive reverse voltage (Vr) of 200 V and a continuous forward current (Io) of 1.1 A. The forward voltage drop (Vf) is specified at a maximum of 980 mV at 1.1 A. Reverse leakage current (Ir) is a maximum of 10 µA at the rated 200 V reverse voltage. With a fast recovery time (trr) of 50 ns, this diode is suitable for applications requiring efficient switching. The junction operating temperature range extends up to 150°C (Max). The DLA11C-TR-E is supplied in a 2-SMD, J-Lead package and is provided in Tape & Reel (TR) packaging. This device is commonly utilized in power supply circuits, switching applications, and general rectification within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 2-SMD, J-Lead |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1.1A |
| Supplier Device Package | SMD |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 980 mV @ 1.1 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
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