BAS116LT3G
DIODE GEN PURP 75V 200MA SOT23-3Manufacturer: onsemi
Categories: Single Diodes
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The onsemi BAS116LT3G is a general-purpose diode designed for efficient signal rectification. This component features a 75V reverse voltage rating and a 200mA average rectified forward current capability. Its low forward voltage drop of 1.25V at 150mA and a reverse leakage current of only 5nA at 75V make it suitable for various applications. Engineered with a small signal speed classification, it excels in applications requiring rapid switching. The diode is housed in a compact SOT-23-3 (TO-236) surface-mount package, supplied on tape and reel. With an operating junction temperature range of -55°C to 150°C, the BAS116LT3G finds utility in consumer electronics, telecommunications, and industrial control systems. The device exhibits a capacitance of 2pF at 0V and 1MHz, and a reverse recovery time of 3µs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 3 µs |
| Technology | Standard |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 75 V |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 150 mA |
| Current - Reverse Leakage @ Vr | 5 nA @ 75 V |
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