1N916TR
DIODE GEN PURP 100V 200MA DO35Manufacturer: onsemi
Categories: Single Diodes
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The onsemi 1N916TR is a general-purpose diode designed for a variety of electronic applications. This through-hole component, housed in a DO-35 package (DO-204AH), offers a maximum DC reverse voltage of 100V and an average rectified current handling of 200mA. Its low reverse leakage current is rated at 5 µA at 75V. The diode features a forward voltage drop of 1V at 10mA and a rapid reverse recovery time of 4ns, classifying it as a small signal diode. With an operating junction temperature range of -55°C to 175°C and a capacitance of 2pF at 0V and 1MHz, the 1N916TR is suitable for use in industries such as telecommunications, industrial control, and consumer electronics. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-35 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 10 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 75 V |
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