1N4448_T26A
DIODE GEN PURP 100V 200MA DO35Manufacturer: onsemi
Categories: Single Diodes
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The onsemi 1N4448-T26A is a general-purpose diode with a maximum reverse voltage of 100V and an average rectified current of 200mA. This axial-leaded component, housed in a DO-35 (DO-204AH) package, offers a fast reverse recovery time of 4ns, making it suitable for small signal applications. Key electrical characteristics include a forward voltage drop of 1V at 100mA and a low reverse leakage current of 5µA at 75V. The diode exhibits a capacitance of 2pF at 0V and 1MHz. Operating across a junction temperature range of -55°C to 175°C, this onsemi diode is frequently utilized in power supplies, switching circuits, and signal processing within the consumer electronics and industrial automation sectors. The device is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-35 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 75 V |
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