1N4446_T50R
DIODE GEN PURP 100V 200MA DO35Manufacturer: onsemi
Categories: Single Diodes
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onsemi 1N4446-T50R is a general-purpose diode with a maximum repetitive reverse voltage of 100V and an average rectified forward current of 200mA. This axial leaded component is housed in a DO-35 package (DO-204AH). It features a low forward voltage of 1V at 20mA and a low reverse leakage current of 25nA at 20V. The diode exhibits a capacitance of 4pF at 0V and 1MHz, and a reverse recovery time of 4ns. Operating junction temperature can reach up to 175°C (Max). This device is suitable for applications requiring signal rectification and switching in consumer electronics, industrial control systems, and telecommunications infrastructure. The 1N4446-T50R is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-35 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 20 mA |
| Current - Reverse Leakage @ Vr | 25 nA @ 20 V |
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