1N4148-T50A
DIODE GEN PURP 100V 200MA DO35Manufacturer: onsemi
Categories: Single Diodes
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The onsemi 1N4148-T50A is a general-purpose silicon epitaxial planar switching diode. This component features a maximum repetitive peak reverse voltage of 100V and a continuous average forward rectified current of 200mA. Its low reverse leakage current is 5 µA at 75V, and it exhibits a fast reverse recovery time of 4 ns, suitable for high-speed switching applications. The forward voltage drop is a maximum of 1V at 10mA. With a junction operating temperature range of -55°C to 175°C, this diode is housed in a DO-35 (DO-204AH) axial package. It is commonly utilized in consumer electronics, telecommunications, and industrial control systems. The 1N4148-T50A is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 4pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-35 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 10 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 75 V |
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