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ZTX749A

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ZTX749A

TRANS PNP 35V 2A TO226

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi ZTX749A is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. This component offers a collector-emitter breakdown voltage of 35V and a continuous collector current capability of up to 2A. It features a minimum DC current gain (hFE) of 100 at 1A and 2V, with a transition frequency of 100MHz. The ZTX749A dissipates a maximum power of 1W and has a collector cutoff current (ICBO) of 100nA. Saturation voltage (Vce) is specified at a maximum of 500mV at 200mA collector current and appropriate base drive. The device is housed in a TO-226 package, suitable for through-hole mounting. This transistor is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 2V
Frequency - Transition100MHz
Supplier Device PackageTO-226
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)35 V
Power - Max1 W

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