TN6729A
TRANS PNP 80V 1A TO226-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi TN6729A is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a maximum power dissipation of 1W, it is suitable for through-hole mounting in a TO-226-3 (TO-92-3) package. Key electrical specifications include a minimum DC current gain (hFE) of 50 at 250mA and 1V, and a Vce saturation of 500mV at 10mA/250mA. The collector cutoff current (ICBO) is specified at a maximum of 100nA. This transistor operates within a temperature range of -55°C to 150°C. It finds application in various industrial and consumer electronics products, including power supply regulation and audio amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 250mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-226-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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