TN6718A
TRANS NPN 100V 1.2A TO226-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi TN6718A is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage (Vce(max)) of 100V and a continuous collector current (Ic) capability of 1.2A, this component is housed in a TO-226-3 (TO-92-3) through-hole package, suitable for robust PCB mounting. It offers a maximum power dissipation of 1W and a low saturation voltage of 500mV at 10mA base current and 250mA collector current. The DC current gain (hFE) is specified at a minimum of 50 when operating at 250mA collector current and 1V collector-emitter voltage. The collector cutoff current (Icbo) is rated at a maximum of 100nA. This device finds utility in industrial automation and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 250mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-226-3 |
| Current - Collector (Ic) (Max) | 1.2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |
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