TN6716A
TRANS NPN 60V 2A TO226-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi TN6716A is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage (Vce) of 60V and a continuous collector current (Ic) capability of up to 2A. The transistor exhibits a minimum DC current gain (hFE) of 50 at 250mA collector current and 1V collector-emitter voltage. Maximum collector cutoff current (ICBO) is specified at 100nA. The saturation voltage (Vce(sat)) is 500mV maximum at 10mA base current and 250mA collector current. With a maximum power dissipation of 1W, the TN6716A is housed in a TO-226-3 (TO-92-3) through-hole package. Its operating temperature range is from -55°C to 150°C. This device is suitable for use in industrial control, consumer electronics, and power management circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 250mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 250mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-226-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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