TN6715A
TRANS NPN 40V 1.5A TO226-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi TN6715A is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 40V and a continuous collector current (Ic) capability of up to 1.5A. The device exhibits a minimum DC current gain (hFE) of 50 at 1A collector current and 1V collector-emitter voltage. Power dissipation is rated at 1W, with a maximum Vce(sat) of 500mV at 100mA base current and 1A collector current. The TN6715A is housed in a TO-226-3 (TO-92-3) package, suitable for through-hole mounting. It operates within a temperature range of -55°C to 150°C. This transistor is commonly employed in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1A, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-226-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1 W |
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