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TN6714A

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TN6714A

TRANS NPN 30V 2A TO226-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi TN6714A is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 30V and a continuous collector current capability of up to 2A. With a maximum power dissipation of 1W, it is housed in a TO-226-3 (TO-92-3) through-hole package. The DC current gain (hFE) is a minimum of 50 at 1A collector current and 1V collector-emitter voltage. The saturation voltage (Vce(sat)) is a maximum of 500mV at 100mA base current and 1A collector current. The collector cutoff current (ICBO) is specified at a maximum of 100nA. This device operates within an industrial temperature range of -55°C to 150°C. It finds application in power supply circuits, motor control, and general industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 1A, 1V
Frequency - Transition-
Supplier Device PackageTO-226-3
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max1 W

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