TN6705A
TRANS NPN 45V 1.5A TO226-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi TN6705A is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 45V and a continuous collector current capability of 1.5A. With a maximum power dissipation of 1W, it is housed in a TO-226-3 (TO-92-3) package, suitable for through-hole mounting. The device exhibits a minimum DC current gain (hFE) of 40 at 250mA and 2V. It is specified with a Vce(sat) of 1V at 100mA and 1A, and a collector cutoff current (ICBO) of 100nA. Operating temperature range is -55°C to 150°C. This transistor finds utility in various industrial and commercial electronics, including power supplies and control circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 250mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-226-3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 1 W |
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