TN5415A
TRANS PNP 200V 0.1A TO226-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi TN5415A is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in a TO-226-3 (TO-92-3) package. This component offers a maximum collector-emitter breakdown voltage of 200 V and a continuous collector current capability of 100 mA. The device exhibits a maximum power dissipation of 1 W and a saturation voltage (Vce(sat)) of 2.5 V at a base current of 5 mA and collector current of 50 mA. Minimum DC current gain (hFE) is specified at 30 when operated at 50 mA collector current and 10 V collector-emitter voltage. Cutoff current (Ic) is a maximum of 50 µA. The operating temperature range is -55°C to 150°C. This transistor finds application in general-purpose amplification and switching circuits within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-226-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 1 W |
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