TN3440A
TRANS NPN 250V 0.1A TO226-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi TN3440A is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 250V and a continuous collector current capability of 100mA. Its transition frequency is rated at 15MHz, and it can dissipate up to 1W of power. The DC current gain (hFE) is a minimum of 40 at 20mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce) is specified at a maximum of 500mV at 4mA base current and 50mA collector current. The TN3440A is housed in a TO-226-3 (TO-92-3) package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C. This transistor finds application in various industrial and consumer electronics, including power supply regulation and signal amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | 15MHz |
| Supplier Device Package | TO-226-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 1 W |
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