TN3019A
TRANS NPN 80V 1A TO226-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi TN3019A is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component offers a maximum collector current (Ic) of 1 A and a collector-emitter breakdown voltage (Vce) of 80 V. It features a transition frequency (fT) of 100 MHz and a maximum power dissipation of 1 W. The TN3019A provides a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. Saturation voltage (Vce(sat)) is specified at 500 mV maximum for a base current (Ib) of 50 mA and collector current (Ic) of 500 mA. The device exhibits a collector cutoff current (Icbo) of 10 nA. The TN3019A is housed in a TO-226-3 (TO-92-3) package suitable for through-hole mounting. Typical applications include power supply regulation, audio amplifiers, and general switching circuits across various industrial and consumer electronics sectors. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-226-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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