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TN2907A

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TN2907A

TRANS PNP 60V 0.8A TO226-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi PNP Bipolar Junction Transistor, part number TN2907A, is a general-purpose device for discrete applications. This PNP transistor features a maximum collector current (Ic) of 800 mA and a collector-emitter breakdown voltage (Vce) of 60 V. With a power dissipation of 625 mW and a minimum DC current gain (hFE) of 100 at 150 mA and 10 V, the TN2907A is suitable for switching and amplification circuits. The device operates within a temperature range of -55°C to 150°C and is presented in a TO-226-3 (TO-92-3) through-hole package. It finds application in various industrial, consumer electronics, and automotive sectors.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-226-3
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max625 mW

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