TN2219A
TRANS NPN 40V 1A TO226-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi TN2219A is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component features a collector-emitter breakdown voltage (Vceo) of 40V and a continuous collector current (Ic) capability of 1A. The device offers a minimum DC current gain (hFE) of 100 at 150mA and 10V. With a maximum power dissipation of 1W, it is suitable for applications within a wide operating temperature range of -55°C to 150°C. The transistor is housed in a TO-226-3 (TO-92-3) package. Typical applications include power switching, voltage regulation, and audio amplification circuits commonly found in industrial controls and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-226-3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1 W |
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