TIS97
TRANS NPN 40V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi TIS97 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 500mA, this component is suitable for moderate power handling. The device exhibits a minimum DC current gain (hFE) of 250 at 100µA collector current and 5V collector-emitter voltage. Its maximum power dissipation is rated at 625mW. The TIS97 is provided in a TO-92-3 (TO-226-3) through-hole package for ease of mounting on printed circuit boards. This transistor finds utility in consumer electronics, industrial control systems, and automotive applications where reliable signal amplification and switching are required. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100µA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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