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TIS93

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TIS93

TRANS PNP 40V 0.8A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi TIS93 is a PNP bipolar junction transistor (BJT) featuring a 40V collector-emitter breakdown voltage and a maximum collector current of 800mA. This through-hole component, packaged in a TO-92-3 (TO-226-3) configuration, offers a minimum DC current gain (hFE) of 100 at 50mA and 2V. The collector saturation voltage (Vce(sat)) is specified at a maximum of 250mV for an Ic of 50mA and Ib of 5mA. It has a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C. This device is suitable for various applications including power switching and general-purpose amplification in industries such as industrial automation and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA, 2V
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

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