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TIP49TU

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TIP49TU

TRANS NPN 350V 1A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi TIP49TU is an NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a maximum collector-emitter breakdown voltage of 350V and a continuous collector current (Ic) capability of 1A. With a power dissipation rating of 2W and a transition frequency of 10MHz, it is suitable for general-purpose amplification and switching tasks. The TIP49TU is housed in a TO-220-3 package, facilitating through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 300mA and 10V, and a Vce saturation of 1V at 200mA and 1A. The maximum collector cutoff current is 1mA. This transistor operates efficiently across a wide temperature range, up to 150°C (TJ). Its specifications make it relevant for use in power supply circuits, audio amplifiers, and motor control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 10V
Frequency - Transition10MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max2 W

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