TIP35B
TRANS NPN 80V 25A TO218Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi TIP35B is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a robust 80V collector-emitter breakdown voltage and a substantial 25A continuous collector current capability, supporting up to 125W of power dissipation. Its transition frequency is rated at 3MHz. The TIP35B is housed in a TO-218 package, facilitating through-hole mounting for reliable thermal management. With a minimum DC current gain (hFE) of 10 at 15A and 4V, it offers efficient amplification and switching characteristics. The operating temperature range spans from -65°C to 150°C. This transistor is a suitable choice for power supply regulation, switching circuits, and audio amplifier output stages across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-218-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 15A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-218 |
| Current - Collector (Ic) (Max) | 25 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 125 W |
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