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TIP29B

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TIP29B

TRANS NPN 80V 1A TO220

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi TIP29B is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a maximum collector-emitter voltage (Vce) of 80V and a continuous collector current (Ic) rating of 1A. With a DC current gain (hFE) of at least 15 at 1A and 4V, it provides robust amplification characteristics. The transistor exhibits a transition frequency of 3MHz and a maximum power dissipation of 2W. Packaged in a TO-220-3 through-hole configuration, the TIP29B is suitable for use in industrial power control, consumer electronics, and automotive applications. Its collector cutoff current is rated at a maximum of 300µA, and the Vce saturation is 700mV at 125mA collector current. The operating temperature range is from -65°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic700mV @ 125mA, 1A
Current - Collector Cutoff (Max)300µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1A, 4V
Frequency - Transition3MHz
Supplier Device PackageTO-220
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W

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