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TIP141G

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TIP141G

TRANS NPN DARL 80V 10A TO247-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi TIP141G is an NPN Darlington bipolar transistor designed for high-power switching and amplification applications. This through-hole component features a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 10 A, dissipating a maximum power of 125 W. The transistor exhibits a minimum DC current gain (hFE) of 1000 at 5 A collector current and 4 V collector-emitter voltage. Its collector-emitter saturation voltage (Vce(sat)) is a maximum of 3 V at 40 mA base current and 10 A collector current. The TIP141G is housed in a TO-247-3 package, suitable for demanding thermal environments. It finds utility in industrial motor control, power supplies, and automotive lighting systems. The device operates within a temperature range of -65°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-247-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 10A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 4V
Frequency - Transition-
Supplier Device PackageTO-247-3
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max125 W

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