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TIP127TU

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TIP127TU

TRANS PNP DARL 100V 5A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi TIP127TU is a PNP Darlington bipolar junction transistor (BJT) designed for robust power switching applications. This component features a 100V collector-emitter breakdown voltage and a continuous collector current capability of 5A. The device exhibits a high DC current gain (hFE) of at least 1000 at 3A and 3V, characteristic of its Darlington configuration, ensuring significant current amplification. Maximum power dissipation is rated at 2W. The TIP127TU is housed in a TO-220-3 package, suitable for through-hole mounting and operating at junction temperatures up to 150°C. Saturation voltage (Vce Sat) is specified at a maximum of 4V when driven by 20mA base current to achieve 5A collector current. This transistor is commonly found in power management circuits, motor control, and general-purpose amplification tasks within industrial and automotive sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic4V @ 20mA, 5A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 3V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max2 W

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onsemi’s core components include:

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onsemi is known for power, sensing, and energy-efficient semiconductor product lines used in automotive, industrial, and energy applications.

Key onsemi product lines include:

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