TIP126G
TRANS PNP DARL 80V 5A TO220Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi TIP126G is a PNP Darlington Bipolar Junction Transistor (BJT) designed for general purpose power switching and amplification. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 5A, with a maximum power dissipation of 2W. The device exhibits a high DC current gain (hFE) of at least 1000 at 3A and 3V, characteristic of its Darlington configuration. Saturation voltage (Vce(sat)) is specified at 4V maximum for an operating point of 20mA base current and 5A collector current. The TIP126G is housed in a TO-220-3 package, utilizing a through-hole mounting method. It operates across a wide temperature range of -65°C to 150°C. This transistor is commonly found in applications such as power supplies, motor control, and lighting control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 20mA, 5A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 3A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |