TIP112TU
TRANS NPN DARL 100V 2A TO220-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
Quality Control: Learn More
onsemi TIP112TU is a robust NPN Darlington bipolar junction transistor (BJT) designed for high-power switching and amplification applications. This component features a collector-emitter breakdown voltage of 100V and a continuous collector current capability of up to 2A. The device exhibits a significant DC current gain (hFE) of a minimum of 1000 at 1A, 4V, characteristic of its Darlington configuration. With a maximum power dissipation of 2W and a junction temperature rating of 150°C, it is suitable for demanding industrial environments. The TIP112TU is housed in a standard TO-220-3 package, facilitating through-hole mounting. Its saturation voltage is specified at 2.5V maximum at 8mA base current and 2A collector current, ensuring efficient operation in switching circuits. This transistor is commonly employed in power management, motor control, and linear voltage regulation within industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A |
| Current - Collector Cutoff (Max) | 2mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
Request a Quote
Clients Also Buy
MJE200STU
TRANS NPN 25V 5A TO126-3
MMBT2907-D87Z
TRANS PNP 40V 0.8A SOT23-3
SMMBTA42LT3G
TRANS NPN 300V 0.5A SOT23-3
