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TIP110TU

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TIP110TU

TRANS NPN DARL 60V 2A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi TIP110TU is an NPN Darlington bipolar junction transistor (BJT) designed for power switching and amplification applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 2A. The TIP110TU offers a substantial minimum DC current gain of 1000 at 1A, 4V, characteristic of its Darlington configuration, with a Vce (saturation) of 2.5V at 8mA, 2A. It is rated for a maximum power dissipation of 2W and operates across a temperature range of -65°C to 150°C. The device is supplied in a TO-220-3 through-hole package and is packaged in a tube. This transistor finds utility in industrial automation, automotive systems, and general power control circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 4V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max2 W

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