Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

TIP102TSTU

Banner
productimage

TIP102TSTU

TRANS NPN DARL 100V 8A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi TIP102TSTU is an NPN Darlington Bipolar Junction Transistor (BJT) designed for power switching applications. This component offers a 100V collector-emitter breakdown voltage and a maximum continuous collector current of 8A. The TIP102TSTU features a high DC current gain (hFE) of at least 1000 at 3A collector current and 4V Vce. With a Vce(sat) of 2.5V maximum at 80mA base current and 8A collector current, it is suitable for driving demanding loads. The device dissipates up to 2W and operates at junction temperatures up to 150°C. This through-hole component is supplied in a standard TO-220-3 package and is commonly utilized in industrial automation, power supply circuits, and motor control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 80mA, 8A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 4V
Frequency - Transition-
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max2 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
191-66007G

LASER DIODE ROD LENS 5X8.5

product image
CLM-635-01 LPO

CONCENTRICITY LASER MODULE

product image
CLM-635-02 LPT

CONCENTRICITY LASER MODULE